2SK2887TL

new-10%

Manufacturer part number:2SK2887TL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 200V 3A DPAK

Case Package:SOT-23

Datasheet:2SK2887TL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn98Cu2)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Current Rating	3A
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	20W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	20W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	900m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	34 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.9Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	12A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free