IRFB4233PBF

new-10%

Manufacturer part number:IRFB4233PBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 230V 56A TO-220AB

Case Package:SOT-23

Datasheet:IRFB4233PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2007
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Max Operating Temperature	175°C
Min Operating Temperature	-40°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	370W Tc
Element Configuration	Single
Power Dissipation	370W
Turn On Delay Time	31 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	37mOhm @ 28A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	56A Tc
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Drain to Source Voltage (Vdss)	230V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	51 ns
Continuous Drain Current (ID)	56A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	230V
Dual Supply Voltage	276V
Input Capacitance	5.51nF
Drain to Source Resistance	37mOhm
Rds On Max	37 mΩ
Nominal Vgs	5 V
Height	16.51mm
Length	10.6426mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant