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BSM300D12P2E001

BSM300D12P2E001

BSM300D12P2E001

ROHM Semiconductor

MOSFET 2N-CH 1200V 300A

SOT-23

BSM300D12P2E001 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 25 Weeks
Mount Surface Mount
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C TJ
Packaging Tray
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Max Power Dissipation 1.875kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 1875W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 68mA
Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 300A
Pulsed Drain Current-Max (IDM) 600A
DS Breakdown Voltage-Min 1200V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1,226.938210 $1
10 $1,186.594014 $10
25 $1,178.345594 $25
50 $1,170.154513 $50
100 $1,146.086692 $100
500 $1,064.147347 $500

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