SIS990DN-T1-GE3

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Manufacturer part number:SIS990DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R

Case Package:SOT-23

Datasheet:SIS990DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Max Power Dissipation	25W
Terminal Form	C BEND
JESD-30 Code	S-PDSO-C6
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	250pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	100V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	12.1A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.085Ohm
Drain to Source Breakdown Voltage	100V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Radiation Hardening	No
RoHS Status	ROHS3 Compliant