DTD123YCT116

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DTD123YCT116

Manufacturer part number:DTD123YCT116

Manufacturer:ROHM Semiconductor

Description:DTD123YCT116 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:DTD123YCT116 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2004
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5
HTS Code	8541.21.00.75
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	200mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	200MHz
Max Breakdown Voltage	50V
Frequency - Transition	200MHz
Resistor - Base (R1)	2.2 k Ω
Resistor - Emitter Base (R2)	10 k Ω
VCEsat-Max	0.3 V
RoHS Status	ROHS3 Compliant