RN1110MFV,L3F

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RN1110MFV,L3F

Manufacturer part number:RN1110MFV,L3F

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1110MFV,L3F datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1110MFV,L3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM
Packaging	Cut Tape (CT)
Published	2009
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	150mW
Power - Max	150mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Resistor - Base (R1)	4.7 kOhms
RoHS Status	RoHS Compliant