EMG8T2R

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EMG8T2R

Manufacturer part number:EMG8T2R

Manufacturer:ROHM Semiconductor

Description:EMG8T2R datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:EMG8T2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD (5 Leads), Flat Lead
Number of Pins	5
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 10
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	150mW
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Time@Peak Reflow Temperature-Max (s)	10
Base Part Number	*MG8
Pin Count	5
Number of Elements	2
Polarity	NPN
Configuration	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation	150mW
Transistor Application	SWITCHING
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
hFE Min	80
Resistor - Base (R1)	4.7k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free