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MMST2222AT146

MMST2222AT146

MMST2222AT146

ROHM Semiconductor

MMST2222AT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

MMST2222AT146 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 600mA
Base Part Number T2222A
Pin Count 3
Number of Elements 1
Voltage 40V
Element Configuration Single
Current 6A
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 35
Continuous Collector Current 600mA
Turn Off Time-Max (toff) 285ns
Collector-Base Capacitance-Max 7pF
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.000410 $1.00041
10 $0.943784 $9.43784
100 $0.890361 $89.0361
500 $0.839964 $419.982
1000 $0.792419 $792.419
MMST2222AT146 Product Details

MMST2222AT146 Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.For high efficiency, the continuous collector voltage must be kept at 600mA.The emitter base voltage can be kept at 6V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.As you can see, the part has a transition frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.A maximum collector current of 600mA volts can be achieved.

MMST2222AT146 Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz

MMST2222AT146 Applications


There are a lot of ROHM Semiconductor MMST2222AT146 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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