PBSS9110Z,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS9110Z,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
Tolerance
5%
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
1.4W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PBSS9110
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Test Current
5mA
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Zener Voltage
20V
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
320mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
100MHz
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Height
6.35mm
Length
12.7mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
PBSS9110Z,135 Product Details
PBSS9110Z,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 100mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.An input voltage of 100V volts is the breakdown voltage.During maximum operation, collector current can be as low as 1A volts.
PBSS9110Z,135 Features
the DC current gain for this device is 150 @ 500mA 5V the vce saturation(Max) is 320mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 100MHz
PBSS9110Z,135 Applications
There are a lot of Nexperia USA Inc. PBSS9110Z,135 applications of single BJT transistors.