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PBSS9110Z,135

PBSS9110Z,135

PBSS9110Z,135

Nexperia USA Inc.

PBSS9110Z,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS9110Z,135 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Tolerance 5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.4W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PBSS9110
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.4W
Case Connection COLLECTOR
Transistor Application SWITCHING
Test Current 5mA
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Zener Voltage 20V
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 100MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.15846 $0.63384
8,000 $0.15012 $1.20096
12,000 $0.14178 $1.70136
28,000 $0.13761 $3.85308
PBSS9110Z,135 Product Details

PBSS9110Z,135 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 100mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.An input voltage of 100V volts is the breakdown voltage.During maximum operation, collector current can be as low as 1A volts.

PBSS9110Z,135 Features


the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS9110Z,135 Applications


There are a lot of Nexperia USA Inc. PBSS9110Z,135 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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