QS8K11TCR

new-10%

Manufacturer part number:QS8K11TCR

Manufacturer:ROHM Semiconductor

Description:4V DRIVE NCH+NCH MOSFET

Case Package:SOT-23

Datasheet:QS8K11TCR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1.5W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	50m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.5A
Gate Charge (Qg) (Max) @ Vgs	3.3nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	3.5A
Drain-source On Resistance-Max	0.07Ohm
Pulsed Drain Current-Max (IDM)	12A
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	1.5W
RoHS Status	ROHS3 Compliant