QS8M31TR

new-10%

Manufacturer part number:QS8M31TR

Manufacturer:ROHM Semiconductor

Description:QS8M31 IS COMPLEX TYPE MOSFET(P+

Case Package:SOT-23

Datasheet:QS8M31TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	1.1W Ta
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	112m Ω @ 3A, 10V, 210m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA, 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	270pF 750pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3A Ta 2A Ta
Gate Charge (Qg) (Max) @ Vgs	4nC, 7.2nC @ 5V
Drain to Source Voltage (Vdss)	60V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.137Ohm
Pulsed Drain Current-Max (IDM)	6A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	1.4 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant