SI1036X-T1-GE3

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Manufacturer part number:SI1036X-T1-GE3

Manufacturer:Vishay Siliconix

Description:Dual N-Ch MOSFET SC-89-6 30V 540 mohms @ 4.5V

Case Package:SOT-23

Datasheet:SI1036X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	540mOhm
Terminal Finish	Matte Tin (Sn)
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	220mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	540m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 15V
Current - Continuous Drain (Id) @ 25°C	610mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.2nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	RoHS Compliant