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R6015KNZC17

R6015KNZC17

R6015KNZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 290m Ω @ 6.5A, 10V ±20V 1050pF @ 25V 27.5nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6015KNZC17 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature 150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 290m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 27.5nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.822391 $3.822391
10 $3.606030 $36.0603
100 $3.401915 $340.1915
500 $3.209353 $1604.6765
1000 $3.027692 $3027.692
R6015KNZC17 Product Details

R6015KNZC17 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1050pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

R6015KNZC17 Features


a 600V drain to source voltage (Vdss)


R6015KNZC17 Applications


There are a lot of ROHM Semiconductor
R6015KNZC17 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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