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IRLBD59N04ETRLP

IRLBD59N04ETRLP

IRLBD59N04ETRLP

Infineon Technologies

MOSFET N-CH 40V 59A D2PAK-5

SOT-23

IRLBD59N04ETRLP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 130W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.22181 $977.448

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