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R6024ENX

R6024ENX

R6024ENX

ROHM Semiconductor

N-Channel Bulk 165m Ω @ 11.3A, 10V ±20V 1650pF @ 25V 70nC @ 10V 600V TO-220-3 Full Pack

SOT-23

R6024ENX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 24A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.165Ohm
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 497 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.660000 $3.66
10 $3.452830 $34.5283
100 $3.257387 $325.7387
500 $3.073007 $1536.5035
1000 $2.899063 $2899.063
R6024ENX Product Details

R6024ENX Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 497 mJ.A device's maximum input capacitance is 1650pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 24A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 72A, which is also its maximum rating peak drainage current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

R6024ENX Features


the avalanche energy rating (Eas) is 497 mJ
a continuous drain current (ID) of 24A
based on its rated peak drain current 72A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


R6024ENX Applications


There are a lot of ROHM Semiconductor
R6024ENX applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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