NVTFS5811NLTWG

new-10%

Manufacturer part number:NVTFS5811NLTWG

Manufacturer:ON Semiconductor

Description:NVTFS5811NLTWG N-channel MOSFET Transistor; 40 A; 40 V; 8-Pin WDFN

Case Package:SOT-23

Datasheet:NVTFS5811NLTWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Power Dissipation-Max	3.2W Ta 21W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	21W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	55ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	354A
Avalanche Energy Rating (Eas)	65 mJ
Height	750μm
Length	3.15mm
Width	3.15mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free