R6030ENZC17

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Manufacturer part number:R6030ENZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 130m Ω @ 14.5A, 10V ±20V 2100pF @ 25V 85nC @ 10V 600V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6030ENZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	120W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	130m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$5.599121	$5.599121
10	$5.282190	$52.8219
100	$4.983198	$498.3198
500	$4.701130	$2350.565
1000	$4.435028	$4435.028

R6030ENZC17 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2100pF @ 25V maximal input capacitance.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).