R6046ANZC8

new-10%

Manufacturer part number:R6046ANZC8

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 10V DRIVE TO-3PF

Case Package:SOT-23

Datasheet:R6046ANZC8 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2011
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Max Output Current	500mA
Number of Elements	1
Number of Channels	1
Interface	On/Off
Power Dissipation-Max	120W Tc
Output Configuration	High Side
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	60 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	81m Ω @ 23A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	46A Ta
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	130ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	230 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	30V
Fault Protection	Over Temperature, Reverse Current
DS Breakdown Voltage-Min	600V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free