IPD60R3K3C6

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IPD60R3K3C6

Manufacturer part number:IPD60R3K3C6

Manufacturer:Infineon Technologies

Description:IPD60R3K3C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IPD60R3K3C6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	18.1W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.3 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40μA
Input Capacitance (Ciss) (Max) @ Vds	93pF @ 100V
Current - Continuous Drain (Id) @ 25°C	1.7A Tc
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	1.7A
Pulsed Drain Current-Max (IDM)	4A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	6 mJ
RoHS Status	RoHS Compliant