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R6050JNZC8

R6050JNZC8

R6050JNZC8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 83m Ω @ 25A, 15V ±30V 4.5nF @ 100V 120nC @ 15V 600V TO-3P-3 Full Pack

SOT-23

R6050JNZC8 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature 150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 83m Ω @ 25A, 15V
Vgs(th) (Max) @ Id 7V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 4.5nF @ 100V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 15V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
R6050JNZC8 Product Details

R6050JNZC8 Overview


A device's maximum input capacitance is 4.5nF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (15V) to reduce its overall power consumption.

R6050JNZC8 Features


a 600V drain to source voltage (Vdss)


R6050JNZC8 Applications


There are a lot of ROHM Semiconductor
R6050JNZC8 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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