RDN100N20

new-10%

Manufacturer part number:RDN100N20

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 200V 10A TO-220FN

Case Package:SOT-23

Datasheet:RDN100N20 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Current Rating	10A
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	35W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	543pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	29ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	10A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	120 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free