RDN100N20FU6

new-10%

Manufacturer part number:RDN100N20FU6

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 200V 10A TO-220FN

Case Package:SOT-23

Datasheet:RDN100N20FU6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	35W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	360m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	543pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	10A
RoHS Status	ROHS3 Compliant