IRLL3303TR

new-10%

Manufacturer part number:IRLL3303TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 4.6A SOT223

Case Package:SOT-23

Datasheet:IRLL3303TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	31m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.6A Ta
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Drain Current-Max (Abs) (ID)	4.6A
Drain-source On Resistance-Max	0.031Ohm
Pulsed Drain Current-Max (IDM)	37A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	140 mJ
RoHS Status	Non-RoHS Compliant