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RDX080N50FU6

RDX080N50FU6

RDX080N50FU6

ROHM Semiconductor

MOSFET N-CH 500V 8A TO-220FM

SOT-23

RDX080N50FU6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
Power Dissipation 40W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 8A
Drain to Source Breakdown Voltage 500V
RoHS Status ROHS3 Compliant

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