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2SK3309(TE24L,Q)

2SK3309(TE24L,Q)

2SK3309(TE24L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 10A TO220SM

SOT-23

2SK3309(TE24L,Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220SM
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 65W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 450V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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