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RDX100N60FU6

RDX100N60FU6

RDX100N60FU6

ROHM Semiconductor

MOSFET N-CH 600V 10A TO-220FM

SOT-23

RDX100N60FU6 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature150°C TJ
PackagingBulk
Published 2006
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 45W Tc
Power Dissipation45W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 650m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 10A
Drain to Source Breakdown Voltage 600V
RoHS StatusROHS3 Compliant
In-Stock:3294 items

About RDX100N60FU6

The RDX100N60FU6 from ROHM Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 10A TO-220FM.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the RDX100N60FU6, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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