RFVS8TJ6SGC9

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Manufacturer part number:RFVS8TJ6SGC9

Manufacturer:ROHM Semiconductor

Description:DIODE GEN PURP 600V 8A TO220ACFP

Case Package:SOT-23

Datasheet:RFVS8TJ6SGC9 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Diode Element Material	SILICON
Packaging	Tube
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T2
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 600V
Voltage - Forward (Vf) (Max) @ If	3V @ 8A
Case Connection	ISOLATED
Operating Temperature - Junction	150°C Max
Output Current-Max	8A
Application	SUPER HYPER FAST RECOVERY
Voltage - DC Reverse (Vr) (Max)	600V
Max Reverse Voltage (DC)	600V
Average Rectified Current	8A
Number of Phases	1
Reverse Recovery Time	40 ns
JEDEC-95 Code	TO-220AC
Non-rep Pk Forward Current-Max	60A
Reverse Current-Max	10μA
RoHS Status	ROHS3 Compliant