RGT8NS65DGC9

new-10%

Manufacturer part number:RGT8NS65DGC9

Manufacturer:ROHM Semiconductor

Description:IGBT

Case Package:SOT-23

Datasheet:RGT8NS65DGC9 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	65W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	40ns
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	8A
Turn On Time	54 ns
Test Condition	400V, 4A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Turn Off Time-Nom (toff)	158 ns
IGBT Type	Trench Field Stop
Gate Charge	13.5nC
Current - Collector Pulsed (Icm)	12A
Td (on/off) @ 25°C	17ns/69ns
RoHS Status	ROHS3 Compliant