NGTB50N65FL2WG

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Manufacturer part number:NGTB50N65FL2WG

Manufacturer:ON Semiconductor

Description:NGTB50N65FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NGTB50N65FL2WG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2015
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	417W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Input Type	Standard
Power - Max	417W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	100A
Reverse Recovery Time	94 ns
Collector Emitter Breakdown Voltage	650V
Test Condition	400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
IGBT Type	Trench Field Stop
Gate Charge	220nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	100ns/237ns
Switching Energy	1.5mJ (on), 460μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free