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BSS123L6433HTMA1

BSS123L6433HTMA1

BSS123L6433HTMA1

Infineon Technologies

Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R

SOT-23

BSS123L6433HTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 69pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.67nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 6Ohm
RoHS Status RoHS Compliant

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