IRFR110

new-10%

Manufacturer part number:IRFR110

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 4.3A DPAK

Case Package:SOT-23

Datasheet:IRFR110 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	D-Pak
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta 25W Tc
Element Configuration	Single
Power Dissipation	2.5W
Turn On Delay Time	6.9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	540mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.3A Tc
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9.4 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	4.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Input Capacitance	180pF
Drain to Source Resistance	540mOhm
Rds On Max	540 mΩ
Height	2.39mm
Length	6.73mm
Width	6.22mm
RoHS Status	Non-RoHS Compliant