SCT2120AFC

new-10%

Manufacturer part number:SCT2120AFC

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 650V 29A TO-220AB

Case Package:SOT-23

Datasheet:SCT2120AFC Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Operating Temperature	175°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	SiCFET (Silicon Carbide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	165W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	156m Ω @ 10A, 18V
Vgs(th) (Max) @ Id	4V @ 3.3mA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 500V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	61nC @ 18V
Rise Time	31ns
Drive Voltage (Max Rds On,Min Rds On)	18V
Vgs (Max)	+22V, -6V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	29A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	22V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	72A
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free