STB85NS04Z

new-10%

Manufacturer part number:STB85NS04Z

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 33V 80A D2PAK

Case Package:SOT-23

Datasheet:STB85NS04Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	SAFeFET™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	THROUGH-HOLE
Base Part Number	STB85N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	215W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	215W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±18V
Fall Time (Typ)	145 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	18V
Drain Current-Max (Abs) (ID)	60A
Drain-source On Resistance-Max	0.015Ohm
Drain to Source Breakdown Voltage	33V
Avalanche Energy Rating (Eas)	550 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant