SP8M10FRATB

new-10%

Manufacturer part number:SP8M10FRATB

Manufacturer:ROHM Semiconductor

Description:4V DRIVE NCH+PCH MOSFET (AEC-Q10

Case Package:SOT-23

Datasheet:SP8M10FRATB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	2W Ta
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 7A, 10V, 56m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	600pF 850pF @ 10V
Current - Continuous Drain (Id) @ 25°C	7A Ta 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs	8.4nC, 8.5nC @ 5V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.037Ohm
Pulsed Drain Current-Max (IDM)	28A
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 4V Drive
RoHS Status	RoHS Compliant