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M470T5267AZ3-CF7DE

M470T5267AZ3-CF7DE

M470T5267AZ3-CF7DE

Samsung Electronics

M470T5267AZ3-CF7DE datasheet pdf and Memory Cards product details from Samsung Electronics stock available on our website

SOT-23

M470T5267AZ3-CF7DE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) 4A994.a
Module DRAM Module
Module Density 4Gbyte
Number of Chip per Module 16
Chip Density (bit) 4G(Stacked)
Data Bus Width (bit) 64
Max. Access Time (ns) 0.4
Maximum Clock Rate (MHz) 800
Chip Configuration 512Mx8
Chip Package Type FBGA
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 2080
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Module Sides Double
ECC Support No
Number of Ranks Dual
Number of Chip Banks 8
CAS Latency 6
SPD EEPROM Support Yes
Standard Package Name DIM
Supplier Package USODIMM
Mounting Socket
Package Height 30
Package Length 67.6
Package Width 3.8(Max)
PCB changed 200
Lead Shape No Lead
Part Status Obsolete
Pin Count 200
Organization 512Mx64
PLL No
Self Refresh Yes
Module Type 200SODIMM
RoHS Status RoHS Compliant

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