MMBT6520LT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.In this part, there is a transition frequency of 40MHz.This device can take an input voltage of 350V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MMBT6520LT1G Features

the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz

MMBT6520LT1G Applications

There are a lot of ON Semiconductor MMBT6520LT1G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter