2SD2643 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
2SD2643 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
60W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN RESISTOR
Case Connection
ISOLATED
Power - Max
60W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2.5V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 5A 4V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2.5V @ 5mA, 5A
Collector Emitter Breakdown Voltage
110V
Transition Frequency
60MHz
Frequency - Transition
60MHz
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.202832
$3.202832
10
$3.021540
$30.2154
100
$2.850510
$285.051
500
$2.689160
$1344.58
1000
$2.536943
$2536.943
2SD2643 Product Details
2SD2643 Overview
This device has a DC current gain of 5000 @ 5A 4V, which is the ratio between the collector current and the base current.When VCE saturation is 2.5V @ 5mA, 5A, transistor means Ic has reached transistors maximum value (saturated).60MHz is present in the transition frequency.A maximum collector current of 6A volts can be achieved.
2SD2643 Features
the DC current gain for this device is 5000 @ 5A 4V the vce saturation(Max) is 2.5V @ 5mA, 5A a transition frequency of 60MHz
2SD2643 Applications
There are a lot of Sanken 2SD2643 applications of single BJT transistors.