2SB1240TV2R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SB1240TV2R Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
3-SIP
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2010
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
1W
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
[email protected] Reflow Temperature-Max (s)
10
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 3V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Current - Collector (Ic) (Max)
2A
Transition Frequency
100MHz
Collector Base Voltage (VCBO)
-32V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.117664
$1.117664
10
$1.054400
$10.544
100
$0.994717
$99.4717
500
$0.938412
$469.206
1000
$0.885295
$885.295
2SB1240TV2R Product Details
2SB1240TV2R Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 500mA 3V DC current gain.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.As you can see, the part has a transition frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SB1240TV2R Features
the DC current gain for this device is 180 @ 500mA 3V the vce saturation(Max) is 800mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -2A a transition frequency of 100MHz
2SB1240TV2R Applications
There are a lot of ROHM Semiconductor 2SB1240TV2R applications of single BJT transistors.