2SD2012 Overview

DC current gain in this device equals 100 @ 500mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 3A volts is possible.

2SD2012 Features

the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 3MHz

2SD2012 Applications

There are a lot of STMicroelectronics 2SD2012 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting