2STF2280 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STF2280 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.4W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
50MHz
Base Part Number
2STF22
Pin Count
4
JESD-30 Code
R-PDSO-F4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 2V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
250mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.026334
$1.026334
10
$0.968240
$9.6824
100
$0.913434
$91.3434
500
$0.861730
$430.865
1000
$0.812953
$812.953
2STF2280 Product Details
2STF2280 Overview
In this device, the DC current gain is 140 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In the part, the transition frequency is 50MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 2A volts can be achieved.
2STF2280 Features
the DC current gain for this device is 140 @ 100mA 2V the vce saturation(Max) is 250mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 50MHz
2STF2280 Applications
There are a lot of STMicroelectronics 2STF2280 applications of single BJT transistors.