2STN2340 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STN2340 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Max Power Dissipation
1.6W
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
2STN
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.6W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
350mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
100MHz
Max Breakdown Voltage
40V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
40V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
2STN2340 Product Details
2STN2340 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A breakdown input voltage of 40V volts can be used.Collector current can be as low as 3A volts at its maximum.
2STN2340 Features
the DC current gain for this device is 180 @ 1A 2V the vce saturation(Max) is 350mV @ 150mA, 3A a transition frequency of 100MHz
2STN2340 Applications
There are a lot of STMicroelectronics 2STN2340 applications of single BJT transistors.