2SC4102T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SC4102T106R Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
50mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SC4102
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
140MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 6V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
120V
Max Frequency
100MHz
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
hFE Min
180
Continuous Collector Current
50mA
Height
900μm
Length
2.1mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.085034
$0.085034
500
$0.062525
$31.2625
1000
$0.052104
$52.104
2000
$0.047802
$95.604
5000
$0.044674
$223.37
10000
$0.041558
$415.58
15000
$0.040191
$602.865
50000
$0.039519
$1975.95
2SC4102T106R Product Details
2SC4102T106R Overview
This device has a DC current gain of 180 @ 2mA 6V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.Continuous collector voltage should be kept at 50mA for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.There is a transition frequency of 140MHz in the part.The breakdown input voltage is 120V volts.Maximum collector currents can be below 50mA volts.
2SC4102T106R Features
the DC current gain for this device is 180 @ 2mA 6V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 5V the current rating of this device is 50mA a transition frequency of 140MHz
2SC4102T106R Applications
There are a lot of ROHM Semiconductor 2SC4102T106R applications of single BJT transistors.