3STL2540 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
3STL2540 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.2W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
3STL25
Configuration
Single
Power - Max
1.2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
210 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 10mA, 1A
Collector Emitter Breakdown Voltage
40V
Max Breakdown Voltage
40V
Frequency - Transition
130MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-6V
hFE Min
100
RoHS Status
ROHS3 Compliant
3STL2540 Product Details
3STL2540 Overview
In this device, the DC current gain is 210 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at -6V can result in a high level of efficiency.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 5A volts at its maximum.
3STL2540 Features
the DC current gain for this device is 210 @ 2A 2V the vce saturation(Max) is 200mV @ 10mA, 1A the emitter base voltage is kept at -6V
3STL2540 Applications
There are a lot of STMicroelectronics 3STL2540 applications of single BJT transistors.