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3STL2540

3STL2540

3STL2540

STMicroelectronics

3STL2540 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

3STL2540 Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status NRND (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-PowerUDFN
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.2W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 3STL25
Configuration Single
Power - Max 1.2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 10mA, 1A
Collector Emitter Breakdown Voltage 40V
Max Breakdown Voltage 40V
Frequency - Transition 130MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) -6V
hFE Min 100
RoHS Status ROHS3 Compliant
3STL2540 Product Details

3STL2540 Overview


In this device, the DC current gain is 210 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at -6V can result in a high level of efficiency.This device can take an input voltage of 40V volts before it breaks down.Collector current can be as low as 5A volts at its maximum.

3STL2540 Features


the DC current gain for this device is 210 @ 2A 2V
the vce saturation(Max) is 200mV @ 10mA, 1A
the emitter base voltage is kept at -6V

3STL2540 Applications


There are a lot of STMicroelectronics 3STL2540 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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