BU807 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BU807 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
60W
Current Rating
8A
Base Part Number
BU807
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
60W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
150V
Max Collector Current
8A
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 5A
Collector Emitter Breakdown Voltage
150V
Collector Base Voltage (VCBO)
330V
Emitter Base Voltage (VEBO)
6V
Continuous Collector Current
8A
VCEsat-Max
1.5 V
Turn Off Time-Max (toff)
1000ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
BU807 Product Details
BU807 Overview
VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at 8A in order to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Collector current can be as low as 8A volts at its maximum.
BU807 Features
the vce saturation(Max) is 1.5V @ 50mA, 5A the emitter base voltage is kept at 6V the current rating of this device is 8A
BU807 Applications
There are a lot of STMicroelectronics BU807 applications of single BJT transistors.