BUL128FP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUL128FP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
31W
Base Part Number
BUL128
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
31W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 2A 5V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 1A, 4A
Collector Emitter Breakdown Voltage
400V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
10
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.922536
$3.922536
10
$3.700505
$37.00505
100
$3.491043
$349.1043
500
$3.293437
$1646.7185
1000
$3.107016
$3107.016
BUL128FP Product Details
BUL128FP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 14 @ 2A 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 1A, 4A.An emitter's base voltage can be kept at 9V to gain high efficiency.When collector current reaches its maximum, it can reach 4A volts.
BUL128FP Features
the DC current gain for this device is 14 @ 2A 5V the vce saturation(Max) is 500mV @ 1A, 4A the emitter base voltage is kept at 9V
BUL128FP Applications
There are a lot of STMicroelectronics BUL128FP applications of single BJT transistors.