BUL810 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUL810 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
450V
Max Power Dissipation
125W
Current Rating
15A
Base Part Number
BUL810
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
125W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 5A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
5V @ 2.4A, 12A
Collector Emitter Breakdown Voltage
450V
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
1kV
Emitter Base Voltage (VEBO)
9V
hFE Min
10
VCEsat-Max
5 V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$2.74523
$1647.138
BUL810 Product Details
BUL810 Overview
This device has a DC current gain of 10 @ 5A 5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 2.4A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).When collector current reaches its maximum, it can reach 15A volts.
BUL810 Features
the DC current gain for this device is 10 @ 5A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 5V @ 2.4A, 12A the emitter base voltage is kept at 9V the current rating of this device is 15A
BUL810 Applications
There are a lot of STMicroelectronics BUL810 applications of single BJT transistors.