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2N6099

2N6099

2N6099

Central Semiconductor

1 Elements 3 Terminations TO-220 Box

SOT-23

2N6099 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-220
PackagingBox
Published 2004
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
HTS Code8541.29.00.95
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation-Max 75W
Case Connection COLLECTOR
Gain Bandwidth Product5MHz
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
Collector Emitter Breakdown Voltage60V
Transition Frequency 5MHz
Collector Emitter Saturation Voltage2.5V
Frequency - Transition 5MHz
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
DC Current Gain-Min (hFE) 20
Continuous Collector Current 450mA
RoHS StatusRoHS Compliant
In-Stock:2371 items

2N6099 Product Details

2N6099 Overview


With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.In order to achieve high efficiency, the continuous collector voltage should be kept at 450mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 5MHz is present in the part.Collector current can be as low as 10A volts at its maximum.

2N6099 Features


a collector emitter saturation voltage of 2.5V
the emitter base voltage is kept at 5V
a transition frequency of 5MHz


2N6099 Applications


There are a lot of Central Semiconductor
2N6099 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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