BUV20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUV20 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
TO-204AA, TO-3
Number of Pins
2
Weight
907.18474mg
Transistor Element Material
SILICON
Operating Temperature
200°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
125V
Max Power Dissipation
250W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Current Rating
50A
Base Part Number
BUV20
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
125V
Max Collector Current
50A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 25A 2V
Current - Collector Cutoff (Max)
3mA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 5A, 50A
Collector Emitter Breakdown Voltage
125V
Transition Frequency
8MHz
Collector Emitter Saturation Voltage
700mV
Frequency - Transition
8MHz
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
7V
hFE Min
20
Height
8.92mm
Length
39.3mm
Width
26mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$11.59200
$1159.2
BUV20 Product Details
BUV20 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 25A 2V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 5A, 50A.Emitter base voltages of 7V can achieve high levels of efficiency.This device has a current rating of 50A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 8MHz.Single BJT transistor is possible to have a collector current as low as 50A volts at Single BJT transistors maximum.
BUV20 Features
the DC current gain for this device is 20 @ 25A 2V a collector emitter saturation voltage of 700mV the vce saturation(Max) is 1.2V @ 5A, 50A the emitter base voltage is kept at 7V the current rating of this device is 50A a transition frequency of 8MHz
BUV20 Applications
There are a lot of STMicroelectronics BUV20 applications of single BJT transistors.