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BC337-40 A1G

BC337-40 A1G

BC337-40 A1G

Taiwan Semiconductor Corporation

BC337-40 A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

BC337-40 A1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BC337-40 A1G Product Details

BC337-40 A1G Overview


DC current gain in this device equals 250 @ 100mA 5V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.

BC337-40 A1G Features


the DC current gain for this device is 250 @ 100mA 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92

BC337-40 A1G Applications


There are a lot of Taiwan Semiconductor Corporation BC337-40 A1G applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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