BUX98APW datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUX98APW Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
450V
Max Power Dissipation
200W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
24A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BUX98
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
450V
Max Collector Current
24A
Current - Collector Cutoff (Max)
2mA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
450V
Collector Base Voltage (VCBO)
1kV
Emitter Base Voltage (VEBO)
7V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
150
$7.19567
$1079.3505
BUX98APW Product Details
BUX98APW Overview
VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 7V for high efficiency.Its current rating is 24A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 24A volts.
BUX98APW Features
the vce saturation(Max) is 1.2V @ 3.2A, 16A the emitter base voltage is kept at 7V the current rating of this device is 24A
BUX98APW Applications
There are a lot of STMicroelectronics BUX98APW applications of single BJT transistors.